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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. june 2014 docid025909 rev 2 1/19 std11n50m2, STF11N50M2 n-channel 500 v, 0.45 ? typ,8 a, mdmesh ii plus? low qg power mosfets in dpak and to-220fp packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. am15572v1 , tab to-220fp dpak 1 3 tab 1 2 3 order codes v ds @ t jmax r ds(on) max i d std11n50m2 550 v 0.53 ? 8 a STF11N50M2 table 1. device summary order codes marking package packaging std11n50m2 11n50m2 dpak tape and reel STF11N50M2 to-220fp tube www.st.com
contents std11n50m2, STF11N50M2 2/19 docid025909 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak, std11n50m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220fp, STF11N50M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid025909 rev 2 3/19 std11n50m2, STF11N50M2 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 8 a i d drain current (continuous) at t c = 100 c 5 a i dm (1) drain current (pulsed) 32 a p tot total dissipation at t c = 25 c 85 25 w dv/dt (1) 1. i sd 8 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (2) 2. v ds 400 v mosfet dv/dt ruggedness 50 v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c = 25 c) 2500 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit dpak to-220fp r thj-case thermal resistance junction-case max 1.47 5 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 50 c/w r thj-amb thermal al resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit dpak to-220fp i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 190 mj
electrical characteristics std11n50m2, STF11N50M2 4/19 docid025909 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 500 v i dss zero gate voltage drain current v gs = 0, v ds = 500 v 1 a v gs = 0, v ds = 500 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4 a 0.45 0.53 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz -395-pf c oss output capacitance - 26 - pf c rss reverse transfer capacitance -1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 400 v - 108 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 6.3 - q g total gate charge v dd = 400 v, i d = 8a, v gs = 10 v (see figure 17 ) -12-nc q gs gate-source charge - 2 - nc q gd gate-drain charge - 6.4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250 v, i d = 4a, r g = 4.7 ? , v gs = 10 v (see figure 16 and figure 21 ) -11-ns t r rise time - 9 - ns t d(off) turn-off delay time - 8 - ns t f fall time - 28.5 - ns
docid025909 rev 2 5/19 std11n50m2, STF11N50M2 electrical characteristics 19 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 8 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 32 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 8 a - 1.6 v t rr reverse recovery time i sd = 8 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) - 258 ns q rr reverse recovery charge - 1.84 c i rrm reverse recovery current - 14.3 a t rr reverse recovery time i sd = 8 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 18 ) - 370 ns q rr reverse recovery charge - 2.87 c i rrm reverse recovery current - 15.5 a
electrical characteristics std11n50m2, STF11N50M2 6/19 docid025909 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ , ' 9 '6 9 $ 9 9 9 *6 9 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$
docid025909 rev 2 7/19 std11n50m2, STF11N50M2 electrical characteristics 19 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 *,3*6$ 5 '6rq , ' $ 9 *6 9 *,3*6$ & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ ( rvv 9 '6 9 ?- *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 5 '6rq 7 - ?& qrup 9 *6 9 *,3*6$
electrical characteristics std11n50m2, STF11N50M2 8/19 docid025909 rev 2 figure 14. normalized v (br)dss vs temperature figure 15. source-drain diode forward characteristics 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
docid025909 rev 2 9/19 std11n50m2, STF11N50M2 test circuits 19 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std11n50m2, STF11N50M2 10/19 docid025909 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025909 rev 2 11/19 std11n50m2, STF11N50M2 package mechanical data 19 4.1 dpak, std11n50m2 figure 22. dpak (to-252) type a drawing b3
package mechanical data std11n50m2, STF11N50M2 12/19 docid025909 rev 2 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid025909 rev 2 13/19 std11n50m2, STF11N50M2 package mechanical data 19 figure 23. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters )3b3
package mechanical data std11n50m2, STF11N50M2 14/19 docid025909 rev 2 4.2 to-220fp, STF11N50M2 figure 24. to-220fp drawing 7012510_rev_k_b
docid025909 rev 2 15/19 std11n50m2, STF11N50M2 package mechanical data 19 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
packaging mechanical data std11n50m2, STF11N50M2 16/19 docid025909 rev 2 5 packaging mechanical data figure 25. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid025909 rev 2 17/19 std11n50m2, STF11N50M2 packaging mechanical data 19 figure 26. reel or dpak (to-252) table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std11n50m2, STF11N50M2 18/19 docid025909 rev 2 6 revision history table 12. document revision history date revision changes 12-feb-2014 1 first release. 17-jun-2014 2 ? modified: title ? modified: dv/dt values in table 2 ? modified: values in table 4 ? modified: r ds(on) value in table 5 ? modified: the entire typical values in table 6 , 7 and 8 ? added: section 2.1: electrical characteristics (curves) ? updated: section 4: package mechanical data ? minor text changes
docid025909 rev 2 19/19 std11n50m2, STF11N50M2 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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